Profile

Dai,Jiangnan

Brief Bio

Jiangnan Dai received his Ph.D. degree from University of Nanchang (Research Center of Luminescent Materials and Devices Engineering of the Ministry of Education) of China in 2007. From 2008 to 2010, he worked in Wuhan National Laboratory Optoelectronics as postdoctal researcher. Currently, he is a associate professor in Wuhan National Laboratory Optoelectronics (WNLO) and Huazhong University of Science and Technology (HUST). Dr. Shen has published more than 50 papers in international journals with the cited times more than 200 of ISI Web of Science. He is Reviewer for Applied Physics Letter, Journal of Applied Physics, Journal of Electronic Materials、Applied Surface Science、Chinese Physics Letters.

Research Areas

Research in wide bandgap semiconductor ZnO, GaN, AlGaN based material growth and device fabrication, including the LED, UV-LED, ultraviolet photodetectors, and so on.

Publications

1. Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD, J. Phys. D: Appl. Phys. 46 065303(2013), W Tian, W Y Yan, J N Dai*, S L Li, Y Tian, Xiong Hui, J B Zhang, Y Y Fang, Z H Wu and C Q Chen(SCI)

2. Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition, Journal of Alloys and Compounds 554 (2013) 104–109 H. Xiong, J.N. Dai*, Xiong Hui, Y.Y. Fang, W. Tian, D.X. Fu, C.Q. Chen, Mingkai Li, Yunbin He(SCI)

3.Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition, J. Appl. Phys. 112, 063526 (2012). W. Tian, W. Y. Yan, Xiong Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai*, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen. (SCI)

4. Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of ?a-GaN Films Grown on r-Plane Sapphire Substrates by MOCVD, Chin. Phys. Lett. 29, 088101 (2012) .Y. Tian, J.N. Dai, Hui Xiong, G. Zheng, Ryu My, Y.Y. Fang, C.Q. Chen(SCI)

5. Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition Journal of ELECTRONIC MATERIALS, Vol. 40, No. 4, 2011, J.N. DAI X.Y. HAN Z.H. WU, Y.Y. FANG, H. XIONG, Y. TIAN, C.H. YU, Q.H. HE, and C.Q. CHEN(SCI)

6. Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio-frequency magnetron sputtering, J.N. Dai, X.Y. Han, Z.H. Wu, C.H. Yu, R.F. Xiang, Q.H. He, Y.H. Gao, C.Q. Chen, X.H. Xiao and T.C. Peng, 2010�� 489:519-522. Journal of Alloys and Compounds (SCI)

7. Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers，J. N. Dai, Z. H. Wu, C. H. Yu, Q. Zhang, Y. Q. Sun, Y. K. Xiong, X. Y. Han, L. Z. Tong, Q. H. He, F. A. Ponce and C. Q. Chen 2009�� 38:1938-1943. J. Electronic Materials(SCI)

8. High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates, Jiangnan Dai, Zhihao Wu, Xiangyun Han, Qinghua He, Yuqing Sun, Chenhui Yu, Lei zhang, Liangzhu Tong, Yihua Gao and Changqing Chen, Proc. of SPIE Vol. 7279, 72791B-1-6, 2009.

9. NH3 -assisted growth approach for ZnO films by atmospheric pressure metalorganic chemical vapor deposition��Jiangnan Dai, Yong Pu, Li Wang, Wenqing Fang, Fan Li, and Fengyi Jiang. 2007�� 89:645 650. Applied Physics A（SCI��/div>

10. Properties of ZnO films grown on (0001) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD. Jiangnan Dai, Hongbo Su, Li Wang, Yong Pu, Wenqing Fang, and Fengyi Jiang. 2006�� 290:426-430 Journal of Crystal Growth(SCI)

11. Comparisons of structural and optical properties of ZnO films grown on (0001) sapphire and GaN/(0001) sapphire template by atmospheric-pressure MOCVD Jiangnan Dai, Hechu Liu, Wenqing Fang, Li Wang, Yong Pu, and Fengyi Jiang. 2006�� 127:280–284. Materials Science and Engineering B（SCI��/div>12. Atmospheric pressure MOCVD growth of high-quality ZnO films on GaN/ Al2O3 templates ，Jiangnan Dai, Hechu Liu, Wenqing Fang, Li Wang, Yong Pu,Yufeng Chen, and Fengyi Jiang 2005�

Awards and Honors

2012 Third class of Jiangxi province natural science award in China

2011 Excellent doctoral dissertation award of Jiangxi in China

2010 Excellent Postdoctor of the HUST in China

2009 China Postdoctoral Science Special Foundation Award

2008, First-class by the China Postdoctoral Science Foundation funded reward

Professional Activities

Reviewer for Applied Physics Letter, Journal of Applied Physics, Journal of Electronic Materials、Applied Surface Science、Chinese Physics Letters.

Member of The Optical Society of America (OSA))

Guangdong Provincial Science and Technology correspondent.